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Home / News / The next step in the high-frequency power electronics revolution

The next step in the high-frequency power electronics revolution

Views: 17     Author: Site Editor     Publish Time: 2022-12-29      Origin: Site

GaNSense half-bridge gallium nitride power chips, the next step in the high-frequency power electronics revolution

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Navitas, a next-generation power semiconductor company and industry leader in gallium nitride power chips, launched GaNSense's half-bridge gallium nitride power chip on September 7, 2022. Compared with the existing discrete scheme, the half-bridge power chip can achieve MHz switching frequency, which will effectively reduce the system loss and complexity.

The Nano NV624X half-bridge gallium Nitride power chip integrates two GaN FETs and drivers, as well as control, level switching, sensing and protection functions, creating an easy-to-use system building block for electronic components. The revolutionary monolithic solution effectively reduces the number and layout of components by 60% compared to the discrete solution, thereby reducing system cost, size, weight and complexity

The Nano-NV624X half-bridge gallium Nitride power chip integrates GaNSense technology to enable unprecedented automatic protection, increased system reliability and stability, and combined with nondestructive electrical testing to achieve even higher levels of efficiency and energy savings.

The high level of integration of the Nanogansense half-bridge gallium nitride power chip solves the problems of circuit parasitization and latency, enabling a wide range of AC-DC power topologies including LLC resonance, asymmetric half-bridge (AHB), and active clamp flyback (ACF) to operate at MHz frequencies. GaNSense's half-bridge gallium nitride power chip is also ideal for totem pole PFC and other motor drive applications

The Nanogansense half-bridge gallium nitride power chip is expected to have a significant impact on all of Nanogansense's target markets, including mobile fast charging for mobile phones, consumer electronics power supplies, data center power supplies, solar inverters, energy storage, and electric vehicle applications.

"In the late 70s and early 80s, the bipolar transistor was replaced by silicon MosFETs," said Gene Sheridan, CEO and co-founder of Nano Semiconductor. The advent of Nano semiconductor gallium nitride technology represents the second power revolution -- the switching frequency and efficiency are greatly improved, and the system size and cost are greatly reduced. Our early GaNFast gallium nitride power chips have made the leap from 50-60 KHZ to 200-500 KHZ, and today the GaNSense half-bridge chip takes these advantages to the MHz level. The gallium nitride revolution continues!"

Satisfied micro early generation of gallium nitride power chip GaNSense half bridge series products, including the NV6247 (2 x 160 m Ω), rated voltage of 650 v. And NV6245C (2×275mΩ); Both are packaged in an industry standard, thin, low inductance 6x8mm PQFN package.

The NV6247 will enter mass production immediately with a delivery cycle of 16 weeks.Samples of the NV6245C are currently being shipped to select customers and mass production is expected to begin for all customers in the fourth quarter of 2022. The company will launch GaNSense half-bridge gallium nitride chips in additional packages and power levels over the next few quarters.


Summary

The NV624x GaNFast half-bridge power chip, which uses GaNSense technology, is a next-generation product that integrates two GaN FETs and actuators, as well as control, level switching, sensing, and protection functions. It can be used for 100 to 300W applications in mobile, consumer, and industrial markets.


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